Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping
Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping
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DOI：
10.1063/5.0044313
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发表时间：
2021-05
期刊：
影响因子：
1.6
通讯作者：
Yanbing Qiu;Zunren Lv;Hong Wang;Haomiao Wang;Xiaoguang Yang;Tao Yang
中科院分区：
文献类型：
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作者：
Yanbing Qiu;Zunren Lv;Hong Wang;Haomiao Wang;Xiaoguang Yang;Tao Yang
报道了直接掺硅使1.3mInAs/α量子点(QD)激光器的线宽增强因子(QD)显著提高，与结构相同但未掺硅的QD激光器相比。结果表明，掺硅量子点激光器的基态和第一激发态的αH因子分别为1.48和0.63，而未掺杂的量子点激光器的H值分别为2.07和1.07，分别降低了约28.5%和41.1%。此外，理论计算和分析表明，直接掺硅会增加导电中的电子准费米能级，导致布居反转增加。同时，Si掺杂引起的内建电场的出现，加速了电子在量子点中的俘获，增强了电子的限制效应，从而提高了微分增益。
We report on the significantly improved linewidth enhancement factor (αH-factor) of 1.3-µm InAs/GaAs quantum dot (QD) lasers by direct Si doping, compared with ones having identical structures but without the Si doping. It is found that the αH-factors for the ground-state and first excited-state at their gain peak positions of the Si-doped QD lasers are 1.48 and 0.63 while those of the undoped QD lasers are 2.07 and 1.07, greatly decreasing by about 28.5% and 41.1%, respectively. Furthermore, theoretical calculation and analysis suggest that direct Si doping would increase the electron quasi-Fermi level in conduction, leading to the increase in population inversion. Meanwhile, the appearance of a built-in electric field caused by the Si doping would accelerate the capture of electrons into QDs and strengthen the confinement effect of electrons, resulting in an increased differential gain.