Surface states and space charge layer dynamics on Si(111)2×1: A free electron laser-synchrotron radiation study
Surface states and space charge layer dynamics on Si(111)2×1: A free electron laser-synchrotron radiation study
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Si(111)2×1 上的表面态和空间电荷层动力学：自由电子激光同步辐射研究
DOI：
10.1063/1.118307
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发表时间：
1997
影响因子：
4
通讯作者：
A. Taleb
中科院分区：
文献类型：
--
作者：
M. Marsi;M. Couprie;L. Nahon;D. Garzella;T. Hara;R. Bakker;M. Billardon;A. Delboulbé;G. Indlekofer;A. Taleb
利用紫外光存储环自由电子激光器和同步辐射相结合的方法，对光激发的Si(111)2×1表面进行了亚纳秒分辨率的时间分辨核能级研究。这使我们能够测量由表面载流子动力学引起的能带弯曲起伏，在光激发后的第一纳秒内；还观察到依赖于泵浦-探测时间延迟的Si2p芯级线形的差异。研究发现，缺陷的存在降低了载流子的起伏，加快了载流子的复合过程。
Combining the use of a UV storage ring free electron laser and of synchrotron radiation, a time resolved core level spectroscopy study has been performed on photoexcited Si(111)2×1 surfaces with subnanosecond resolution. This enabled us to measure band bending fluctuations, caused by surface carrier dynamics, during the first nanosecond after photoexcitation; differences in the Si2p core level lineshape, dependent on the pump-probe time delay, were also observed. The presence of defects was found to reduce the fluctuations and make the carrier recombination process faster.