Organosilicon ion beam for SiC heteroepitaxy
Organosilicon ion beam for SiC heteroepitaxy
复制标题
用于 SiC 异质外延的有机硅离子束
DOI：
10.1016/j.surfcoat.2003.09.003
复制
发表时间：
2003
影响因子：
5.4
通讯作者：
S. Gotô
中科院分区：
文献类型：
--
作者：
M. Kiuchi;T. Matsutani;T. Takeuchi;Matsumoto Takashi;S. Sugimoto;S. Gotô
一种使用有机硅离子束的低能沉积技术已被开发出来，并成功应用于在 900-1300 K 温度下在 Si 衬底上异质外延生长 SiC。该工艺在 Freeman 型离子源中采用气态 CH3SiH2CH3 来产生 CH3Si+ 碎片离子，然后对这些离子进行质量选择并以 100 eV 沉积在 Si 晶圆上。离子能量精确控制，能量波动±1 eV。 RHEED 分析和 AFM 观察分别表明 SiC 薄膜已经异质外延结晶并以“纳米瓦”的形式出现。该技术为制造自组装 SiC 纳米结构提供了潜力。
A low-energy deposition technique using a beam of organosilicon ions has been developed and successfully applied for heteroepitaxial growth of SiC on a Si substrate at temperatures of 900–1300 K. The process employs gaseous CH3SiH2CH3in a Freeman-type ion source to produce CH3Si+fragment ions that are then mass-selected and deposited at 100 eV on a Si wafer. Ion energy was precisely controlled and energy fluctuation was ±1 eV. RHEED analysis and AFM observation, respectively, showed that a thin film of SiC had been crystallized heteroepitaxially and in the form of ‘nano-tiles.’ The technique offers the potential for fabrication of self-assembled SiC nanostructures.