Structural, magnetic, and ferroelectric properties of multiferroic BiFeO3 film fabricated by chemical solution deposition
Structural, magnetic, and ferroelectric properties of multiferroic BiFeO3 film fabricated by chemical solution deposition
复制标题
DOI：
10.1063/1.2711279
复制
发表时间：
2007-05
影响因子：
3.2
通讯作者：
H. Naganuma;S. Okamura
中科院分区：
文献类型：
--
作者：
H. Naganuma;S. Okamura
采用化学溶液沉积法在Pt、Ti、SiO2、Si（100）衬底上制备了BiFeO_3多晶薄膜。铁电电滞回线显示室温下47μ Cscincm ~ 2的高回复极化。在100 kV scincm下，漏电流密度为10−1A scincm 2，表明本发明的BiFeO 3薄膜具有高漏电流密度。漏电流机制可以认为是：低电场下欧姆导电和Poole-Frenkel陷阱辅助导电，高电场下空间电荷限制电流启动。在室温下观察到弱的铁磁性，在10 K下，磁性增加到0.5kOe，具有2 emu scincm ~ 3的小回复磁化强度。为了研究BiFeO_3薄膜的磁电效应，在室温下测量了5 kG磁场下的铁电滞回线。
Polycrystalline BiFeO3 film has been fabricated by a chemical solution deposition on Pt∕Ti∕SiO2∕Si(100) substrates. A ferroelectric hysteresis loop showed a high remanent polarization of 47μC∕cm2 at room temperature. Leakage current density was on the order of 10−1A∕cm2 at 100kV∕cm, indicating the high leakage current density in the present BiFeO3 film. The leakage current mechanism could be considered as follows: Ohmic conduction at low electric field and Poole-Frenkel trap-assisted conduction appeared as the electric field increased, and space-charge-limited current started at a high electric field. Weak ferromagnetism was observed at room temperature, and magnetic coercivity increased to 0.5kOe with small remanent magnetization of 2emu∕cm3 at 10K. In order to investigate the magnetoelectric effect of the BiFeO3 film, the ferroelectric hysteresis loop was measured under the magnetic field of 5kG at room temperature.