Electron Mobility and Impurity Concentration in n-GaP Crystals Grown by Slow Cooling of Ga Solution
Electron Mobility and Impurity Concentration in n-GaP Crystals Grown by Slow Cooling of Ga Solution
复制标题
Ga 溶液缓慢冷却生长的 n-GaP 晶体中的电子迁移率和杂质浓度
DOI：
10.1143/jjap.8.358
复制
发表时间：
1969
影响因子：
1.5
通讯作者：
A. Kasami
中科院分区：
文献类型：
--
作者：
M. Toyama;M. Naito;A. Kasami
n-GaP 晶体是通过缓慢冷却掺杂不同浓度 Te 的 Ga 溶液来生长的。在 77°K 至 400°K 的温度范围内测量了晶体中的电子迁移率和载流子浓度。迁移率分析表明，限制电子迁移率的主要过程是200-400°K的层间散射和77-200°K的空间电荷区域的散射。对于层间散射，X 点附近的 LA 声子（Tc=300°K）似乎发挥了主导作用。该声子的耦合常数估计为 0.7×109 eV/cm，与 Si 中主要层间声子的有效耦合常数相同。还研究了晶体的不均匀性以及载流子浓度对掺杂水平的依赖性，并与通过热梯度法和气相外延生长的晶体进行了比较。
n-GaP crystals were grown by slow cooling of Ga solution doped with various concentrations of Te. Electron mobility and carrier concentration in the crystals were measured in the temperature range from 77°K to 400°K. The analysis of mobility showed that the dominant process limiting the electron mobility is the intervalley scattering at 200–400°K and the scattering by space charge regions at 77–200°K. As for the intervalley scattering, the LA phonon near the X point, Tc=300°K, appeared to make a dominant contribution. The coupling constant for this phonon was estimated to be 0.7×109 eV/cm, just the same as the effective coupling constant for the dominant intervalley phonon in Si. The inhomogeneity in the crystals and the dependence of carrier concentration on doping level were also investigated and compared with those in the crystals grown by thermal gradient method and by vapor-phase epitaxy.