Porphyrin films. 3. Photovoltaic properties of octaethylporphine and tetraphenylporphine
Porphyrin films. 3. Photovoltaic properties of octaethylporphine and tetraphenylporphine
复制标题
卟啉薄膜。
DOI：
10.1021/j100523a002
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发表时间：
1977
期刊：
影响因子：
--
通讯作者：
M. Gouterman
中科院分区：
文献类型：
--
作者：
F. Kampas;M. Gouterman
铝的电学和光伏特性|八乙基卟啉|Ag和Al|四苯基卟啉|报道了银夹心电池。这些性质表明存在由电子从铝转移到卟啉形成的肖特基势垒。对于几百纳米厚的膜，大多数或全部卟啉耗尽空穴。电荷载流子通过三个过程产生：（i）通过具有3eV或更高能量的光子直接产生电子-空穴对;（ii）在铝-卟啉界面处激子的解离;以及（iii）在本体材料中激子的解离。在低光照水平下，目前生产的量子产率为3.4%的octateethylporphine照射400 nm的光和0.9%的四苯基卟啉照射440 nm的光。在较高的光水平下，由于电子和空穴的复合，电流产生的量子产额降低。
Electrical and photovoltaic properties of Al| octaethylporphine| Ag and also Al| tetraphenylporphine| Ag sandwich cells are reported. These properties indicate the presence of a Schottky barrier formed by transfer of electrons from the aluminum to the porphyrin. Most or all of the porphyrin is depleted of holes for films several hundred nanometers thick. Charge carriers are produced by three processes:(i) direct production of electron-hole pairs by photons with energies of 3 eV or more;(ii) dissociation of excitons at the aluminum-porphyrin interface; and (iii) dissociation of excitons in the bulk material. At low light levels the quantum yield for current production is 3.4% for octaethylporphine illuminated by 400-nm light and 0.9% for tetraphenylporphine illuminated by 440-nm light. At higher light levels the quantum yieldfor current production decreases due to recombination of electrons and holes.