Bound-to-continuum intraband transition properties in InAs/GaAs quantum dot superlattice solar cells
Bound-to-continuum intraband transition properties in InAs/GaAs quantum dot superlattice solar cells
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DOI：
10.7567/1882-0786/ab56ef
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发表时间：
2019-11
影响因子：
2.3
通讯作者：
Y. Harada;S. Asahi;T. Kita
中科院分区：
文献类型：
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作者：
Y. Harada;S. Asahi;T. Kita
我们研究了InAs/GaAs量子点超晶格（QDSL）太阳能电池的带间和带内激发密度以及极化相关光电流，内置电场为5 kV cm−1。一个几乎偏振不敏感的带内跃迁被观察到正常入射光，而轻微的各向异性的带内跃迁导致的导带和价带之间的混合。此外，在p-i-n太阳能电池器件中观察到可饱和的双色光电流，这是由于QDSL迷你带中的电子输运。
We studied the interband and intraband excitation densities and the polarization dependent photocurrent in InAs/GaAs quantum dot superlattice (QDSL) solar cells with a built-in electric field of 5 kV cm−1. An almost polarization-insensitive intraband transition was observed for normal incident light, whereas slight anisotropy in the intraband transition resulted from the mixing between the conduction and valence bands. Furthermore, saturable two-color photocurrent was observed in the p–i–n solar-cell device because of electron transport in the QDSL miniband.