Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by tailoring polarization in electron blocking layer
Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by tailoring polarization in electron blocking layer
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DOI：
10.1016/j.spmi.2015.02.040
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发表时间：
2015-07-01
影响因子：
3.1
通讯作者：
Zheng, Youdou
中科院分区：
文献类型：
--
作者：
Yang, Guofeng;Chang, Jianjun;Zheng, Youdou
对AlGaN基紫外发光二极管进行了数值模拟研究。具有定制渐变AlGaN EBL的LED的光输出功率显著提高。模拟分析表明，通过适当改变有源区最后一个势垒到EBL的极化场，不仅可以消除电子向p型层的溢出，而且可以增强空穴向有源区的注入。通过模拟量子威尔斯阱的能带图、载流子浓度分布和辐射复合率，解释了定制紫外发光二极管性能的提高。(C)2015爱思唯尔有限公司版权所有。
The AlGaN-based ultraviolet light-emitting diodes (UV LEDs) with specific design of graded AlGaN electron blocking layer (EBL) are investigated numerically. The light output power of LEDs with tailored graded AlGaN EBL is markedly improved. Simulation analysis shows that via proper modification of polarization field from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved, but also the hole injection into the active region can be enhanced. The enhanced performance for tailored UV LED is explained by the simulated energy band diagrams, distribution of carrier concentration and radiative recombination rate in the quantum wells. (C) 2015 Elsevier Ltd. All rights reserved.