Temperature Evolution in Nanoscale Carbon-Based Memory Devices Due to Local Joule Heating
Temperature Evolution in Nanoscale Carbon-Based Memory Devices Due to Local Joule Heating
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DOI：
10.1109/tnano.2017.2674303
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发表时间：
2017-02
影响因子：
2.4
通讯作者：
T. Bachmann;A. Alexeev;W. Koelmans;F. Zipoli;A. Ott;C. Dou;A. Ferrari;V. K. Nagareddy;M. Craciun;V. Jonnalagadda;A. Curioni;A. Sebastian;E. Eleftheriou;C. Wright
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文献类型：
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作者：
T. Bachmann;A. Alexeev;W. Koelmans;F. Zipoli;A. Ott;C. Dou;A. Ferrari;V. K. Nagareddy;M. Craciun;V. Jonnalagadda;A. Curioni;A. Sebastian;E. Eleftheriou;C. Wright
四面体非晶（ta-C）碳基存储器件最近获得了牵引力，由于其良好的可扩展性和有前途的性能，如纳秒开关速度。然而，自行车耐力仍然是一个关键的挑战。在本文中，我们提出了一个模型，考虑到局部波动的sp$^{2}$和sp$^{3}$内容时，描述的ta-C存储器件的导电性。我们提出了一个详细的研究ta-C存储设备的导电性范围从欧姆行为在低电场的介质击穿。该研究包括脉冲开关实验和设备规模的模拟，这使我们能够第一次提供见解的局部温度分布在内存切换的开始。
Tetrahedral amorphous (ta-C) carbon-based memory devices have recently gained traction due to their good scalability and promising properties like nanosecond switching speeds. However, cycling endurance is still a key challenge. In this paper, we present a model that takes local fluctuations in sp$^{2}$ and sp$^{3}$ content into account when describing the conductivity of ta-C memory devices. We present a detailed study of the conductivity of ta-C memory devices ranging from ohmic behavior at low electric fields to dielectric breakdown. The study consists of pulsed switching experiments and device-scale simulations, which allows us for the first time to provide insights into the local temperature distribution at the onset of memory switching.