In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures
In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures
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离子注入 Si/SiGe/Si (001) 异质结构退火过程中位错与点缺陷相互作用的原位研究
DOI：
10.1017/s1431927698980308
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发表时间：
1998
影响因子：
2.8
通讯作者：
Nejim
中科院分区：
文献类型：
--
作者：
Stach;Hull;Bean;Jones;Nejim
应变层异质结构提供了理想的系统，通过原位透射电子显微镜研究位错运动的动力学，因为几何形状，应变状态和动力学可以表征和直接控制。我们将讨论如何使用这些结构来研究位错点缺陷的相互作用，强调必要的实验要求，量化的位错运动。在离子注入之后，取决于注入种类、能量和电流密度，在SiGe外延层内引入不同浓度和类型的点缺陷。通过在注入后的透射电子显微镜（TEM）中原位退火样品，我们可以直接观察位错运动并量化位错-点缺陷相互作用对位错速度的影响。我们发现，位错运动受阻，如果注入剂量峰值位于外延层内，位错钉扎在点缺陷气氛。将BF 2浅注入到样品覆盖层中导致更复杂的行为。对于低电流密度注入，位错速度可能会显着增加，在较高的电流密度，这种增加的幅度是显着较小。注入不同的离子分别牵连氟的物种负责观察到的位错速度的增加，大概是由于位错扭结成核率的电效应。
Strained layer heterostructures provide ideal systems with which to study the dynamics of dislocation motion via in situ transmission electron microscopy, as the geometry, strain state, and kinetics can be characterized and directly controlled. We discuss how these structures are used to study dislocation-point defect interactions, emphasizing the experimental requirements necessary for quantification of dislocation motion. Following ion implantation, different concentrations and types of point defects are introduced within the SiGe epilayer depending on the implantation species, energy, and current density. By annealing samples in situ in the transmission electron microscope (TEM) following implantation, we can directly observe dislocation motion and quantify the effect of dislocation-point defect interactions on dislocation velocities. We find that dislocation motion is impeded if the implantation dose peak lies within the epilayer, as dislocations pin at point defect atmospheres. Shallow BF2 implantation into the sample capping layer results in more complicated behavior. For low current density implants, dislocation velocities may be dramatically increased; at higher current densities the magnitude of this increase is significantly smaller. Implantation of different ions separately implicates fluorine as the species responsible for the observed increases in dislocation velocities, presumably due to an electrical effect on the rate of dislocation kink nucleation.