Dependence of the organic nonvolatile memory performance on the location of ultra-thin Ag film
Dependence of the organic nonvolatile memory performance on the location of ultra-thin Ag film
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DOI：
10.1088/0022-3727/43/3/035101
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发表时间：
2010-01
期刊：
影响因子：
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通讯作者：
B. Jiao;Zhaoxin Wu;Q. He;Yuan Tian-;Guilin Mao;X. Hou
中科院分区：
文献类型：
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作者：
B. Jiao;Zhaoxin Wu;Q. He;Yuan Tian-;Guilin Mao;X. Hou
我们研究了基于超薄Ag膜嵌入的4，4 ′，4 ″-三[N-（3-甲基苯基）-N-苯胺基]三苯胺（m-MTDATA）的有机非易失性存储器件。研究了超薄Ag膜在m-MTDATA中不同位置的存储器件，发现Ag膜的位置对有机存储器的开关比、保持时间和循环寿命等性能有影响。当Ag膜位于ITO/m-MTDATA界面时，可以获得最大的开/关比（约105），但循环耐久性较差。当Ag膜位于m-MTDATA层的中间区域时，开/关比下降约103，但表现出更好的循环耐久性能。当Ag膜靠近Al电极时，器件的导通/截止比和保持时间急剧下降，并且半导体发光现象几乎消失。我们的工作显示了一个简单的方法来提高有机存储器的性能，通过调整的金属膜的位置。
We demonstrated organic nonvolatile memory devices based on 4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino] triphenylamine (m-MTDATA) inserted by an ultra-thin Ag film. The memory devices with different locations of ultra-thin Ag film in m-MTDATA were investigated, and it was found that the location of the Ag film could affect the performance of the organic memory, such as ON/OFF ratio, retention time and cycling endurance. When the Ag film was located at the ITO/m-MTDATA interface, the largest ON/OFF ratio (about 105) could be achieved, but the cycling endurance was poor. When the Ag film was located in the middle region of the m-MTDATA layer, the ON/OFF ratios came down by about 103, but better performance of cycling endurance was exhibited. When the Ag film was located close to the Al electrode, the ON/OFF ratios and the retention time of this device decreased sharply and the bistable phenomenon almost disappeared. Our works show a simple approach to improve the performance of organic memory by adjusting the location of the metal film.