Temperature Dependence of the Ideality Factor of Ba1-xKxBiO3/Nb-doped SrTiO3 All-Oxide-Type Schottky Junctions
Temperature Dependence of the Ideality Factor of Ba1-xKxBiO3/Nb-doped SrTiO3 All-Oxide-Type Schottky Junctions
复制标题
DOI：
10.1143/jjap.37.4737
复制
发表时间：
1998-09
影响因子：
1.5
通讯作者：
Tetsuya Yamamoto;Seiji Suzuki;K. Kawaguchi;Kazuhiko Takahashi
中科院分区：
文献类型：
--
作者：
Tetsuya Yamamoto;Seiji Suzuki;K. Kawaguchi;Kazuhiko Takahashi
在30 ~ 300 K温度范围内对Ba_（1-x）K_xBi_（O_3）/Nb掺杂SrTiO_3（BKBO/STO：Nb）全氧化物肖特基结进行了电流-电压测量。测量了未掺杂SrTiO_3（110）的相对介电常数εr（E，T）随温度和电场的变化。在金属接触（BKBO）和半导体界面（STO：Nb）之间存在一个薄的绝缘界面层，利用界面层模型分析了理想因子n（T）随温度降低而异常增大，零偏压势垒高度Φ b 0（T）随温度降低而减小的现象.低温下n（T）的增加可以通过考虑耗尽层（STO：Nb）的介电常数的温度依赖性来解释。利用近似的电场关系εr（T，E）=B/（a+E2）1/2（a，B为常数）讨论了STO：Nb的介电常数与电场关系对n（T）的影响。
Current-voltage measurements were performed on Ba1-xKxBiO3/Nb-doped SrTiO3 (BKBO/STO:Nb) all-oxide-type Schottky junctions in the temperature range of 30 to 300 K. The relative permittivity εr(E, T) of undoped SrTiO3(110) was measured as a function of both temperature and electric field. An anomalous increase in ideality factor n(T) and decrease in zero-bias barrier height Φb0(T) with decreasing temperature were observed and were analyzed using the interfacial layer model with a thin insulating interfacial layer present between metal contact (BKBO) and semiconductor interface (STO:Nb). The increase in n(T) at low temperature can be explained by taking into account the temperature dependence of the permittivity of the depletion layer (STO:Nb). The effect of the electric field dependence of the permittivity of STO:Nb on n(T) is also discussed using an approximate electric field dependence, εr(T, E)=b/(a+E2)1/2, where a and b are constants.