Toward an AlGaAsSb/GaInAsSb/GaSb laser emitting beyond 3 &mgr;m
Toward an AlGaAsSb/GaInAsSb/GaSb laser emitting beyond 3 &mgr;m
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迈向发射超过 3 的 AlGaAsSb/GaInAsSb/GaSb 激光器
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
Y. Rouillard
中科院分区：
文献类型：
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作者：
J. Angellier;D. Barat;G. Boissier;France Chevier;P. Grech;Y. Rouillard
我们用分子束外延技术制备了发射波长为2.3 ~ 3.1 m的量子威尔斯激光二极管。随着波长的增长，阈值电流密度几乎呈指数增长。我们得到的阈值低至65 A/cm ~ 2在2.3 m和156 A/cm ~ 2在2.62 m。同时，价带偏移从132 meV（在2.3 m）下降到78 meV（在2.6 m）。阈值电流密度的研究表明，俄歇效应不是唯一负责的Jth的增加。内效率ηi的降低对Jth的增加影响较大。随着波长的增加，ηi的降低与空穴约束的减小有关。因此，为了提高在更高波长处的Jth，必须利用另一种势垒（例如，由于使用五元材料AlGaInAsSb）。
We have made quantum wells laser diodes by Molecular Beam Epitaxy with emission wavelengths from 2.3 &mgr;m to 3.1 &mgr;m. With growing wavelength, threshold current densities increase almost exponentially. We obtained threshold values as low as 65 A/cm2 at 2.3 &mgr;m and 156 A/cm2 at 2.62 &mgr;m. At the same time, the valence-band offset decrease from 132 meV (at 2.3 &mgr;m) to 78 meV (at 2.6 &mgr;m). A threshold current density study shows that Auger effect is not the only responsible for the augmentation of Jth. The reduction of internal efficiency ηi has a greater impact on the increase of Jth. The diminution of the holes confinement is incriminated for the degradation of ηi with growing wavelength. Therefore, to improve Jth at higher wavelengths another kind of barrier has to be utilized (for example, thanks to the use of the quinary material AlGaInAsSb).