Optimization of surface passivation for suppressing leakage current in GaSb PIN devices
Optimization of surface passivation for suppressing leakage current in GaSb PIN devices
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DOI：
10.1049/el.2020.2063
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发表时间：
2020-11
影响因子：
1.1
通讯作者：
Y. Ji;K. M. Azizur-Rahman;T. Chang;B. Juang;D. Prout;B. Liang;D. Huffaker;A. Chatziioannou
中科院分区：
文献类型：
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作者：
Y. Ji;K. M. Azizur-Rahman;T. Chang;B. Juang;D. Prout;B. Liang;D. Huffaker;A. Chatziioannou
作者(S)：纪一宏|顾问(S)：斯特雷特，德怀特·C|摘要：表面钝化抑制漏电流对GaSb基光电子器件起着至关重要的作用。为了提高GaSb p-i-n器件的性能，本研究对硫钝化参数进行了精心的优化。在硫钝化过程中，评估了两个相互竞争的过程：分别帮助表面钝化和再氧化的HS�-离子的水解和氧化。经过硫钝化工艺参数的优化和AlD-Al_2O_3的封装，GaSb p-i-n结构的表面电阻率从4.3KΩ∙cm显著增加到28.6KΩ∙cm，室温暗电流下降了19.1倍。本工作为提高GaSb基器件的光电性能提供了一种可重复、稳定的钝化方法。
Author(s): Ji, Yihong | Advisor(s): Streit, Dwight C | Abstract: The suppression of leakage current via surface passivation plays a critical role for GaSb based optoelectronic devices. In this study, the sulfur passivation parameters are carefully optimized in this study for improving the performance of GaSb p-i-n devices. Two competing processes are evaluated during the sulfur passivation process: the hydrolysis and oxidation of HS�- ions that aide surface passivation and re-oxidation, respectively. Upon the optimization of sulfur passivation parameters and subsequent encapsulation with ALD Al2O3, the surface resistivity significantly increased from 4.3kΩ∙cm to 28.6kΩ∙cm, leading to 19.1 times drop in dark current at room temperature for the GaSb p-i-n structure. This work provides a repeatable and stable passivation approach for improving the optoelectronic performance of GaSb based devices.