Tensely strained GeSn alloys as optical gain media
Tensely strained GeSn alloys as optical gain media
复制标题
作为光学增益介质的张应变 GeSn 合金
DOI：
--
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
D. Buca
中科院分区：
文献类型：
--
作者：
S. Wirths;Z. Ikonić;A. Tiedemann;B. Holländer;T. Stoica;G. Mussler;U. Breuer;J. Hartmann;A. Benedetti;S. Chiussi;D. Grützmacher;S. Mantl;D. Buca
这封信提出了外延生长和表征的异质结构的电注入激光器，应变GeSn有源阱的基础上。GeSn阱内的弹性应变可以通过高质量的大Sn含量（Si）GeSn缓冲层从压缩调整到拉伸。拉伸应变和Sn合金化的最佳组合软化了对间接到直接带隙转变的要求。我们从理论上讨论了GeSn有源层中最大净增益的应变-掺杂关系。采用0.5%的拉伸应变使得Ge0.94Sn0.06能够实现合理的高光学增益值，并且甚至对于Ge0.92Sn0.08没有任何n型掺杂。
This letter presents the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well. The elastic strain within the GeSn well can be tuned from compressive to tensile by high quality large Sn content (Si)GeSn buffers. The optimum combination of tensile strain and Sn alloying softens the requirements upon indirect to direct bandgap transition. We theoretically discuss the strain-doping relation for maximum net gain in the GeSn active layer. Employing tensile strain of 0.5% enables reasonable high optical gain values for Ge0.94Sn0.06 and even without any n-type doping for Ge0.92Sn0.08.