Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method
Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method
复制标题
原位刻蚀氢化物气相外延在蓝宝石上制备无裂纹 AlN 薄膜
DOI：
10.7567/apex.9.045501
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发表时间：
2016
影响因子：
2.3
通讯作者：
Xu Ke
中科院分区：
文献类型：
--
作者：
Liu Xue-Hua;Zhang Ji-Cai;Su Xu-Jun;Huang Jun;Zheng Shu-Nan;Hu Yun-Yun;Ye Bin-Bin;Zhao Jing-Jing;Wang Jian-Feng;Zhang Jin-Ping;Xu Ke
采用氢化物气相外延技术在蓝宝石衬底上生长了无裂纹的AlN薄膜，并在生长过程中进行了原位腐蚀。在选定的生长阶段，通过中断生长并在高温下的H2气氛中进行原位刻蚀，形成了纳米级的空洞。透射电子显微镜显示，空洞位于强烈扭曲的位置，从而松弛应变，降低位错密度。拉曼光谱和X射线衍射测试进一步证明了纳米空穴在释放失配应变和减少位错方面发挥了重要作用。这项工作为制备厚的、高质量的氮化铝开辟了广阔的前景。
Crack-free AlN films were grown on sapphire by hydride vapor phase epitaxy, with in situ etching applied during growth. Nanoscale voids were formed at a chosen growth stage by interrupting the growth and performing in situ etching in an H2 atmosphere at elevated temperature. Transmission electron microscopy showed the voids located at strongly distorted locations, and hence relaxing the strain and reducing the dislocation density. Raman spectra and X-ray diffraction measurements further demonstrated important role played by the nanoscale voids in releasing misfit strain and reducing dislocations. This work opens a promising perspective for fabricating thick, high-quality AlN.