High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes
High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes
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DOI：
10.1063/1.2132085
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发表时间：
2005-11
影响因子：
4
通讯作者：
R. Khanna;S. Han;S. Pearton;D. Schoenfeld;W. Schoenfeld;F. Ren
中科院分区：
文献类型：
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作者：
R. Khanna;S. Han;S. Pearton;D. Schoenfeld;W. Schoenfeld;F. Ren
用Co_（60）γ射线辐照未封装的InGaN多量子阱发光二极管（LED），辐照剂量范围为150- 2000 Mrad（Si），辐照波长为410 - 510 nm。所有被照射的LED的正向导通电压略微增加（例如，而反向击穿电压在实验误差范围内没有变化。410 nm二极管的光输出强度在150 MRad剂量后降低20%，在152 GRad剂量后降低75%。发光二极管中的电流输运在辐照前后均以产生-复合（理想因子为102）为主。p型和n型欧姆金属化的形态和外观没有显示出任何可检测的变化，即使是最高的γ射线剂量的结果。
InGaN multiquantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410to510nm were irradiated with Co60 γ-rays with doses in the range 150–2000Mrad (Si). The forward turn-on voltage for all the irradiated LEDs was increased slightly (e.g., by only ∼0.1–0.15V for 500MRad dose irradiation) while the reverse breakdown voltage was unchanged within experimental error. The light output intensity for the 410nm diodes was decreased by 20% after a dose of 150MRad and 75% after ∼2GRad. The current transport in the LEDs was dominated by generation-recombination (ideality factor ∼2) both before and after irradiation. The morphology and appearance of the p and n-Ohmic metallization did not show any detectable change as a result of even the highest γ-ray dose.