Asymmetric Spin Torque Transfer in Nano GMR Device With Perpendicular Anisotropy
Asymmetric Spin Torque Transfer in Nano GMR Device With Perpendicular Anisotropy
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DOI：
10.1109/tmag.2007.893528
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发表时间：
2007-05
影响因子：
2.1
通讯作者：
H. Meng;Jianping Wang
中科院分区：
文献类型：
--
作者：
H. Meng;Jianping Wang
研究了具有垂直各向异性的巨磁电阻(GMR)器件的自旋扭矩传递行为。通过电流限制效应和磁交换耦合复合效应，插入纳米电流通道层可以有效地降低临界开关电流密度。根据器件内纳米电流沟道层的位置，对于平行和反平行配置之间的切换过程，临界开关电流密度的降低可以是对称的(或不对称的)。在强电流限制和交换耦合复合效应下，RARR并联开关的降幅可达52%，而RARR逆变开关的降幅仅为31%
Spin torque transfer behaviors in giant magnetoresistive (GMR) devices with perpendicular anisotropy were investigated. The critical switching current density could be effectively reduced by an inserted nano-current-channel layer through the current confined effect and the magnetic exchange coupling composite effect. Depending on the location of the nano-current-channel layer inside the device, the reduction of the critical switching current density could be symmetric (or asymmetric) for the switching processes between parallel and anti parallel configurations. With strong current confined and exchange coupling composite effects, the reduction is up to 52% for parallel rarr anti-parallel switching while it is only 31% for anti-parallel rarr parallel switching