Quantum dot chemiluminescence
Quantum dot chemiluminescence
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DOI：
10.1021/nl049713w
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发表时间：
2004-04-01
期刊：
影响因子：
10.8
通讯作者：
Weller, H
中科院分区：
文献类型：
--
作者：
Poznyak, SK;Talapin, DV;Weller, H
我们首次报道了在溶液和纳米颗粒层中半导体量子点带隙化学发光的观测结果。CdSe/CdS核壳和InP纳米晶体带隙化学发光的光谱位置取决于它们的粒径，因此能够有效地调节发射颜色，并且单分散样品具有优异的色纯度。通过对由InP或CdSe/CdS核壳纳米晶体制成的纳米颗粒层施加阴极电位，可以显著提高纳米晶体化学发光的效率。在这种情况下，通过电子注入对粒子进行电化学n型掺杂，提供了一种“量子限制阴极保护”，防止空穴注入时纳米晶体的氧化腐蚀，并实现高效且稳定的电化学发光。
We report the first observation of band gap chemiluminescence of semiconductor quantum dots in solution and in nanoparticulate layers. The spectral position of the band gap chemiluminescence of CdSe/CdS core shell and InP nanocrystals depends on their particle size, allowing thus an efficient tuning of the emission color with superior color purity inherent for monodisperse samples. The efficiency of nanocrystal chemiluminescence can be dramatically enhanced by applying a cathodic potential to the nanoparticulate layers made from Use or CdSe/CdS core-shell nanocrystals. In this case electrochemical n-doping of the particles via electron injection provides a "quantum confined cathodic protection" against nanocrystal oxidative corrosion upon hole injection and allows the achievement of efficient and stable electrogenerated chemiluminescence.