Tunnel magnetoresistance on ferromagnetic single-electron transistors with multiple tunnel junction
Tunnel magnetoresistance on ferromagnetic single-electron transistors with multiple tunnel junction
复制标题
多隧道结铁磁单电子晶体管的隧道磁阻
DOI：
10.1063/1.1357123
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发表时间：
2001
影响因子：
3.2
通讯作者：
Y. Takemura
中科院分区：
文献类型：
--
作者：
J. Shirakashi;Y. Takemura
对具有铁磁多隧道结的单电子晶体管进行了理论研究。库仑封锁状态下的隧道磁阻由栅极电压调制，并且随着隧道结数量的增加而增加。高阶隧道过程，特别是电荷的非弹性宏观量子隧道过程，在增强隧道磁阻方面发挥着重要作用。这意味着铁磁单电子晶体管的隧道磁阻可以通过栅极和漏极电压以及隧道结的数量来控制。
Single-electron transistors with ferromagnetic multiple tunnel junctions are studied theoretically. Tunnel magnetoresistance under the Coulomb blockade regime is modulated by the gate voltage and is increased with increasing the number of tunnel junctions. Higher-order tunneling processes, especially for inelastic macroscopic quantum tunneling of charge, play an important role in the enhancement of the tunnel magnetoresistance. This implies that the tunnel magnetoresistance of the ferromagnetic single-electron transistor could be controlled by the gate and drain voltages and the number of the tunnel junctions.