Low-Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach
Low-Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach
复制标题
通过有机金属方法进行晶体管技术的低温湿法保形硅化镍沉积
DOI：
10.1021/acsami.6b13852
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发表时间：
2017
影响因子：
9.5
通讯作者：
Zenobi, Renato
中科院分区：
文献类型：
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作者：
Lin, Tsung-Han;Margossian, Tigran;De Marchi, Michele;Thammasack, Maxime;Zemlyanov, Dmitry;Kumar, Sudhir;Jagielski, Jakub;Zheng, Li-Qing;Shih, Chih-Jen;Zenobi, Renato
如今，集成电路的性能竞赛正面临规模缩小的限制。为了突破这一纳米级的极限，具有复杂几何结构的现代晶体管蓬勃发展，从而实现了更高的性能和能效。伴随着这一突破，在每一个重要的步骤上都出现了对高性能器件的挑战，例如金属硅化物形成的不均匀覆盖问题和热致短路问题。在这方面，我们开发了一种在近常温下形成硅化镍的两步有机金属方法。透射电子显微镜和原子力显微镜显示，NiSixon原始硅表面形成了一层均匀的共形层。后处理将碳含量降低到与原始晶片相似的水平(∼6%)。X-射线光电子能谱还表明，退火后硅层中的硅含量增加，根据对硅纳米粒子模型的X射线吸收光谱研究，表明该层为NiSi2。特性拟合表明，该NiSi2层具有0.41 eV的竞争肖特基势垒高度和8.5Ω的串联电阻，从而为在先进器件上形成金属硅化物开辟了一条替代的低温路线。
The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this breakthrough, challenges toward high-performance devices have emerged on each significant step, such as the inhomogeneous coverage issue and thermal-induced short circuit issue of metal silicide formation. In this respect, we developed a two-step organometallic approach for nickel silicide formation under near-ambient temperature. Transmission electron and atomic force microscopy show the formation of a homogeneous and conformal layer of NiSixon pristine silicon surface. Post-treatment decreases the carbon content to a level similar to what is found for the original wafer (∼6%). X-ray photoelectron spectroscopy also reveals an increasing ratio of Si content in the layer after annealing, which is shown to be NiSi2according to X-ray absorption spectroscopy investigation on a Si nanoparticle model.I–Vcharacteristic fitting reveals that this NiSi2layer exhibits a competitive Schottky barrier height of 0.41 eV and series resistance of 8.5 Ω, thus opening an alternative low-temperature route for metal silicide formation on advanced devices.