Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
复制标题
DOI：
10.1021/nl101902k
复制
发表时间：
2010-11-01
期刊：
影响因子：
10.8
通讯作者：
Choi, Sung-Yool
中科院分区：
文献类型：
--
作者：
Jeong, Hu Young;Kim, Jong Yun;Choi, Sung-Yool
对于用于低成本、大面积和低功率柔性电子应用的新型非易失性存储器技术存在强烈的需求。基于金属氧化物薄膜的电阻式存储器作为下一代非易失性存储器件已经被广泛研究。然而，尽管基于金属氧化物的电阻式存储器具有若干优点，例如良好的可扩展性、低功耗和快速切换速度，但由于其材料特性和高温制造工艺的必要性，其在大面积柔性衬底上的应用受到限制。作为一个有前途的非易失性存储器技术的大面积灵活的应用程序，我们提出了一种基于氧化石墨烯的存储器，可以很容易地制造使用室温下的旋转铸造方法在柔性基板上，并具有可靠的存储器性能方面的保留和耐久性。的双极电阻开关行为的微观起源被阐明，并归因于断裂和形成的导电丝之间的氧化石墨烯膜和顶部Al金属电极，通过高分辨率透射电子显微镜和原位X射线光电子能谱之间形成的顶部非晶界面层。这项工作提供了一个重要的一步，为发展的基础物理的双极电阻开关在氧化石墨烯薄膜的理解，应用到未来的柔性电子产品。
There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behavior was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ X-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.