A simulation model for SiC power MOSFET based on surface potential
A simulation model for SiC power MOSFET based on surface potential
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基于表面电位的SiC功率MOSFET仿真模型
DOI：
10.1109/sispad.2016.7605162
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
T. Hikihara
中科院分区：
文献类型：
--
作者：
Yohei Nakamura;Michihiro Shintani;Kazuki Oishi;Takashi Sato;T. Hikihara
本文提出了一种基于表面电势的碳化硅功率MOSFET仿真模型，用于精确的电路仿真。通过考虑垂直功率碳化硅MOSFET的物理结构和特性，该模型再现了较宽偏置电压范围内的静态和动态特性。通过使用商用的碳化硅功率MOSFET进行实验，在I-V、C-V特性上，测量结果与模拟结果吻合较好。在超过1 MHz的暂态行为中也证实了良好的匹配性。
In this paper, we propose a surface-potential-based simulation model of SiC power MOSFETs for accurate circuit simulation. By considering physical structure and behavior of vertical power SiC MOSFETs, the proposed model reproduces static and dynamic characteristics upon wide range of bias voltages. Through experiments using a commercial SiC power MOSFET, good agreements have been observed between measurement and simulation in I-V, C-V characteristics. Good match in transient behavior beyond 1 MHz is also confirmed.