Multilayer Substrate Integrated Waveguide (SIW) Filters With Higher-Order Mode Suppression
Multilayer Substrate Integrated Waveguide (SIW) Filters With Higher-Order Mode Suppression
复制标题
具有高阶模抑制功能的多层基板集成波导 (SIW) 滤波器
DOI：
10.1109/lmwc.2016.2597222
复制
发表时间：
2016-09-01
影响因子：
3
通讯作者：
Wu, Ke
中科院分区：
文献类型：
--
作者：
Jia, Dinghong;Feng, Quanyuan;Wu, Ke
本文提出了一种抑制基片集成波导(SIW)带通滤波器高阶模式的多层方法。多层衬底上的矩形SiW谐振器可以通过在中间金属层上刻蚀的孔洞与磁和/或电耦合垂直耦合。由于所提出的与TE102模相关的弱耦合或混合耦合方案，可以抑制由第一高阶模TE102产生的谐波通带。与传统的水平耦合滤波器相比，所提出的滤波器具有更小的物理尺寸。为了验证所提出的设计方法，制作了两个双层SiW带通滤波器(I和II)并进行了测试。实验结果表明，在TE102模式频率下，滤波器I和II的最大抑制级分别小于-30和-20分贝。此外，仿真和测量结果也显示出很好的一致性。
This letter presents a multilayer approach for suppressing the higher order modes of substrate integrated waveguide (SIW) bandpass filters. Rectangular SIW resonators in multilayer substrates can be vertically coupled with magnetic and/or electric coupling by the proposed apertures etched on the middle metal layer. Harmonic passbands produced by the first higher-order mode TE102 can be suppressed thanks to the proposed weak coupling or mixed coupling schemes in connection with the TE102 mode. Compared with conventional horizontally coupled filter, the proposed filters also show a compact physical size. To demonstrate the proposed design method, two double-layered SIW bandpass filters Filter (I and II) are fabricated and measured. The experimental results show that the maximum rejection levels at the TE102 mode frequencies are below -30 dB and -20 dB for Filter I and II, respectively. Furthermore, simulated and measured results also show a good agreement.