Threshold voltage variation for charge accumulation in carbon nanotube owing to monatomic defect arrangement
Threshold voltage variation for charge accumulation in carbon nanotube owing to monatomic defect arrangement
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DOI：
10.7567/jjap.54.06ff04
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发表时间：
2015-04
影响因子：
1.5
通讯作者：
U. Ishiyama;N. Cuong;S. Okada
中科院分区：
文献类型：
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作者：
U. Ishiyama;N. Cuong;S. Okada
我们基于密度泛函理论（DFT）和有效的筛选介质方法，报告了电场下单空位碳纳米管（CNT）的电子特性。我们的 DFT 计算表明，电场下 CNT 的电子结构表现出与电场引起的载流子积累相关的脊带性质。然而，单空位引起的内部电场导致载流子积累的栅极电压发生变化。累积的载流子主要集中在碳纳米管的电极侧，由于内部电场的作用，稀疏地分布在缺陷位点周围。
We report the electronic properties of carbon nanotubes (CNTs) with monovacancy under an electric field on the basis of density functional theory (DFT) with effective screening medium methods. Our DFT calculations show that the electronic structures of CNT under the electric field show their ridged band nature with respect to the carrier accumulations by the electric field. However, an internal electric field induced by the monovacancy leads to a variation in the gate voltage for carrier accumulations. The accumulated carriers are mainly localized at the electrode side of CNTs and are sparsely distributed around the defect sites because of the internal electric field.