Bulk and Interface Engineering of GeO_2/Ge for High-k/Germanium Gate Stack
Bulk and Interface Engineering of GeO_2/Ge for High-k/Germanium Gate Stack
复制标题
用于高 k/锗栅极堆栈的 GeO_2/Ge 的本体和界面工程
DOI：
10.1149/1.3569941
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Yusuke Oniki
中科院分区：
文献类型：
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作者：
Sasazawa;Y.;Kanagaki;S.;Tashiro;E.;Nogawa;T.;Muroi;M.;Kondoh;Y.;Osada;H.;Imoto;M;Yusuke Oniki
本文研究了一氧化锗脱附对热生长二氧化锗界面和氧化体的影响及其控制方法。脱附增加了氧化膜的界面态密度，提高了氧化膜的吸水性。正电荷的密度很大程度上取决于氧化物中水分子的数量。此外，平带电压偏移由于正电荷，这可以产生在一个给定的电场从施主类陷阱，线性增加的氧化物中的最大字段。研究发现，抑制一氧化锗的脱附和水的吸收是制备高质量二氧化锗膜作为高N/锗栅叠层中间层的关键。
Effects of germanium-monoxide desorption on both the interface and the oxide bulk of thermally grown germanium-dioxide as well as its controlling methods have been investigated. The density of interface states was increased and water absorbency of the oxide film was enhanced by the desorption. The density of positive charge strongly depends on amount of water molecules in the oxide. Moreover, the flat-band voltage shift due to the positive charge, which can be generated at a given electric field from donor-like traps, increases linearly with the maximum field in the oxide. It was found that suppression of both the germaniummonoxide desorption and the water absorption are the keys for fabrication of high-quality germanium-dioxide film as an interlayer of the high-N/germanium gate stack.