Laser Wavelength Dependent Properties of BN Thin Films Deposited by Laser Ablation
Laser Wavelength Dependent Properties of BN Thin Films Deposited by Laser Ablation
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激光烧蚀沉积 BN 薄膜的激光波长相关特性
DOI：
10.1557/proc-423-397
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
K. Baba
中科院分区：
文献类型：
--
作者：
Y. Suda;T. Nakazono;K. Ebihara;K. Baba
使用 Nd:YAG (532 nm) 和 KrF 准分子 (248 nm) 激光烧蚀将氮化硼 (BN) 薄膜沉积在加热 (650 °C) 的硅 (100) 基板上。激光束聚焦在六方氮化硼目标上。使用10Hz的激光重复频率和3.8J/cm 2 的能量密度来生长薄膜。将氩气与反应物氮气混合，沉积过程中腔室中的总气压为20 Pa。俄歇电子能谱显示N/B组成比取决于氮气的混合比和B + (345.1 nm)的相对发射强度。 532 nm 激光制备的薄膜表面形态粗糙，含有大颗粒，而 248 nm 激光制备的薄膜表面更光滑，颗粒更少且更小。傅里叶变换红外测量表明，通过在基底电极上施加负射频自偏压（约 200 V），薄膜中的 cBN 相得到增强。
Boron Nitride (BN) thin films are deposited on heated (650 ° C ) silicon (100) substrates using Nd:YAG (532 nm) and KrF excimer (248 nm) laser ablation. The laser beam is focused on the hBN targets. The films are grown using a laser repetition rate of 10 Hz atenergy density 3.8 J/cm 2 . Argon gas is mixed with the reactant nitrogen gas and the total gas pressure in the chamber during deposition is 20 Pa. Auger Electron Spectroscopy shows that the N/B composition ratio depends on the mixture ratio of nitrogen and the relativeemission intensity of B + (345.1 nm). The surface morphology of the films prepared by the 532 nm laser is rough with large particulates, whereas much smoother surfaces with fewer and smaller particulates are obtained with the 248 nm laser. Fourier Transform IR measurement shows that the cBN phase in the films is enhanced by applying the negative RF self-bias voltage ( ˜ 200 V) on the substrate electrode.