Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films
Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films
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DOI：
10.1063/1.4983031
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发表时间：
2017-05-01
影响因子：
4
通讯作者：
Boettger, U.
中科院分区：
文献类型：
--
作者：
Starschich, S.;Schenk, T.;Boettger, U.
研究了用化学溶液沉积法（CSD）制备的Hf 1-xZrxO 2（HZO）和纯ZrO 2薄膜的铁电和压电性能。使用双光束激光干涉仪（DBLI）和压电响应力显微镜测量的压电性能。结果表明，对于100 nm厚的薄膜，最大的反射极化被发现为纯ZrO 2和减少铪含量的增加。在195 ~ 390 nm的ZrO_2薄膜厚度范围内，观察到稳定的反射极化率为8 μ C/cm ~（2）。从单极DBLI测量中提取10 pm/V的压电系数。原子层沉积沉积HZO基铁电材料的厚度限制可以通过本文提出的CSD沉积技术来克服。厚ZrO 2薄膜是有前途的候选人，能源相关的应用，如热电和压电能量收集和电热冷却以及微机电系统。
Ferroelectric and piezoelectric properties of Hf1-xZrxO2 (HZO) and pure ZrO2 films with a layer thickness of up to 390 nm prepared by chemical solution deposition (CSD) are investigated. The piezoelectric properties are measured using a double-beam laser interferometer (DBLI) and piezoresponse force microscopy. It is shown that for 100 nm thick films, the maximum remanent polarization is found for pure ZrO2 and reduces for the increasing hafnium content. A stable remanent polarization of 8 mu C/cm(2) is observed for ZrO2 film thicknesses between 195 and 390 nm. A piezoelectric coefficient of 10 pm/V is extracted from unipolar DBLI measurements. The observed thickness limitation for atomic layer deposition deposited HZO based ferroelectrics can be overcome by the CSD deposition technique presented in this work. Thick ZrO2 films are promising candidates for energy related applications such as pyroelectric and piezoelectric energy harvesting and electrocaloric cooling as well as for microelectromechanical systems.