Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
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DOI：
10.35848/1882-0786/aba22c
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发表时间：
2020-08-01
影响因子：
2.3
通讯作者：
Shiraishi, Masashi
中科院分区：
文献类型：
--
作者：
Koike, Hayato;Lee, Soobeom;Shiraishi, Masashi
为了提高n型非简并硅基横向自旋阀的磁阻比，我们改变了硅层的掺杂分布，并通过改变盖层绝缘体在硅沟道中引入了更大的局域应变。通过这些改进，在Si-LSVs中获得了最高的MR比1.4%，其中铁磁接触电阻面积积的减小和Si沟道中动量弛豫时间的增加起到了显著的作用。
To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.