Direct observation of thermal energy transfer across the thin metal film on silicon substrates by a rear heating–front detection thermoreflectance technique
Direct observation of thermal energy transfer across the thin metal film on silicon substrates by a rear heating–front detection thermoreflectance technique
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DOI：
10.1088/0957-0233/22/2/024012
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发表时间：
2011-02
影响因子：
2.4
通讯作者：
S. H. Firoz;T. Yagi;N. Taketoshi;K. Ishikawa;T. Baba
中科院分区：
文献类型：
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作者：
S. H. Firoz;T. Yagi;N. Taketoshi;K. Ishikawa;T. Baba
采用皮秒光脉冲加热方法，在后加热-前探测（RF）结构下，观察了硅基钼薄膜的热能传递。采用波长为1550 nm的皮秒激光作为加热激光。由于硅是透明的，钼对该波长是不透明的，所以可以直接加热硅衬底侧的钼膜表面。将波长为780 nm的另一皮秒脉冲激光入射到前表面上以观察温度历史曲线。薄膜沉积在硅和合成石英基板上，在同一批处理目前的观察。薄膜的热扩散率为3.8 × 10 - 5 m2 s-1，这是从一维热扩散方程计算的，考虑了从薄膜到基板的热渗出。这些值与底物无关。该报告表明，在RF型配置下的光脉冲热反射方法可以应用于各种各样的硅衬底上的薄膜，这是熟悉的电子工业。
The thermal energy transfer across molybdenum thin films on silicon substrates has been observed by a picosecond light pulse heating method under the rear heating–front detection (RF) configuration. A picosecond laser with 1550 nm wavelength is introduced as a heating laser. Since silicon is transparent and molybdenum is opaque to that wavelength, the surface of the molybdenum film on the silicon substrate side can be heated directly. Another picosecond pulse laser having a wavelength of 780 nm was incident on the front surface to observe the temperature history curve. Thin films were deposited on silicon and synthetic quartz substrates under the same batch process for present observation. The thermal diffusivities of the films are 3.8 × 10−5 m2 s−1, which were calculated from the one-dimensional heat diffusion equation considering the heat effusion from the films to the substrates. Those values were independent of the substrates. This report demonstrated that the light pulse thermoreflectance method under the RF-type configuration could be applied to a wide variety of thin films on silicon substrates that is familiar to electronics industry.