Observation of Etch Pits of β-FeSi2 Single Crystals
Observation of Etch Pits of β-FeSi2 Single Crystals
复制标题
β-FeSi2 单晶蚀坑的观察
DOI：
10.1143/jjap.40.4164
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发表时间：
2001
影响因子：
1.5
通讯作者：
Isao Kikuma Isao Kikuma
中科院分区：
文献类型：
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作者：
H. Udono;Isao Kikuma Isao Kikuma
我们观察了用温度梯度溶液法生长的p型β-FeSi_2单晶的腐蚀坑。用稀氢氟酸和HF：HNO_3：H_2 O =1：2：2-8溶液腐蚀晶体表面，观察到与晶体表面取向有关的特征腐蚀坑。这些腐蚀剂适用于β-FeSi_2单晶的腐蚀坑和表面取向的观察。
We have observed etch pits of p-type β-FeSi2 single crystals grown by the temperature gradient solution growth method. Characteristic etch pits which depend on the surface orientation of the crystals were observed on the surface etched by diluted hydrofluoric acid and HF:HNO3:H2O=1:2:2–8 solutions. These etchants are suitable for the observation of etch pits and surface orientation of β-FeSi2 single crystals.