Degradation in a Molybdenum-Gate MOS Structure Caused by N + Ion Implantation for Work Function Control
Degradation in a Molybdenum-Gate MOS Structure Caused by N + Ion Implantation for Work Function Control
复制标题
用于功函数控制的 N 离子注入引起的钼栅 MOS 结构的退化
DOI：
10.1557/proc-716-b7.5
复制
发表时间：
2002
期刊：
影响因子：
--
通讯作者：
K. Shibahara
中科院分区：
文献类型：
--
作者：
Takaaki Amada;N. Maeda;K. Shibahara
Ranade等报道了一种利用退火或N +离子注入控制Mo栅功函数的技术，我们在此基础上研制了5-20 nm SiO2的Mo栅MOS二极管，发现随着N +注入剂量和注入能量的增加，栅漏电流增大。虽然在C-V特性中观察到功函数偏移，但在高剂量样品中发现了由高密度界面态引起的驼峰。然而，实现了大于-1V的功函数偏移。而对于功函数较大的样品，Si表面的氮浓度约为1 × 1020 cm-3
An Mo gate work function control technique which uses annealing or N + ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO 2 and found that the gate leakage current was increased as the N + implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x10 20 cm -3 for the specimen with a large work function