Membrane Supported GaN CPW Structures for High-frequency and High-power Applications
Membrane Supported GaN CPW Structures for High-frequency and High-power Applications
复制标题
适用于高频和高功率应用的膜支撑 GaN CPW 结构
DOI：
10.1109/apmc46564.2019.9038731
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
K. Elgaid
中科院分区：
文献类型：
--
作者：
A. Eblabla;M. Alathbah;Zehao Wu;J. Lees;K. Elgaid
本文研究了在低电阻率(LR)硅衬底上生长的AlGaN/GaN高电子迁移率晶体管(HEMT)的高性能GaN薄膜共面波导(CPW)技术。所开发的共面波导技术在去除共面波导结构下的有损硅后，射频损耗得到了显著改善，其射频性能与在高阻(HR)硅和半绝缘(SI)碳化硅衬底上实现的共面波导相当，而AlGaN/GaN顶层外延层相似。首次报道的实验结果表明，在40 GHz频率下，GaN薄膜技术上的共面波导的传输损耗(S)为0.47dB，Q值为20.77，而GaN-On-LR单晶硅上的共面波导的传输损耗为2.95dB，Q值为4.51。此外，通过提取频率高达40 GHz的传输线参数，研究和分析了衬底寄生对不同衬底上生长的GaN基HEMT的共面波导射频性能的影响。这些发现提供了可行的基于LR Si技术的集成GaN基HEMT，当与钻石和AIN等高热系数材料一起使用时，适用于射频和毫米波频率的大功率和高温系统应用。
High performance coplanar waveguides (CPWs) on GaN membrane technology for AlGaN/GaN high electron mobility transistors (HEMTs) grown on low-resistivity (LR) Si substrates have been demonstrated in this work. The developed CPW technology shows a remarkable improvement in RF losses when the lossy Si beneath CPW structures is removed, resulting in comparable RF performance to that of CPW realized on high-resistivity (HR) Si and semi-insulating (SI) SiC substrates, with similar AlGaN/GaN top epitaxial layers. Experimental results, first to be reported, demonstrate transmission losses ($S_{21}$) of 0.47 dB and $Q$-factor of 20.77 for the CPW on GaN membrane technology, compared to $S_{21}$ of 2.95 dB and $Q$-factor of 4.51 for the CPW on GaN-on-LR Si, at 40 GHz. Furthermore, the influence of substrate parasitics on RF performance of CPW on GaN-based HEMTs grown on various substrates was studied and analyzed by the extraction of transmission line parameters for frequencies up to 40 GHz. These findings offer viable integrated GaN-based HEMTs on LR Si technology suitable for high-power and high-temperature system applications at RF and millimeter-wave frequencies, when used in conjunction with high thermal coefficient materials such as diamond and AIN.