Magneto-optical and magnetotransport properties of amorphous ferromagnetic semiconductor Ge1−xMnx thin films
Magneto-optical and magnetotransport properties of amorphous ferromagnetic semiconductor Ge1−xMnx thin films
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DOI：
10.1063/1.3023070
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发表时间：
2008-11
影响因子：
4
通讯作者：
S. Yada;S. Sugahara;Masaaki Tanaka
中科院分区：
文献类型：
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作者：
S. Yada;S. Sugahara;Masaaki Tanaka
研究了热氧化Si衬底上Mn掺杂非晶Ge（a-Ge 1 −xMnx）薄膜的磁光和磁输运性质。磁性圆二色性测量表明，当x>0.02时，薄膜呈现铁磁有序，且具有磁性均匀性。薄膜的电阻率随x的增加而减小，电阻率的温度依赖性表现出类似于超导体的行为。a-Ge 1 −xMnx薄膜的反常霍尔效应也表现出铁磁行为。磁化强度的温度依赖性是一致的磁光和磁输运的结果。这些结果表明，a-Ge 1 −xMnx薄膜表现为铁磁半导体。
The authors investigate the magnetooptical and magnetotransport properties of Mn-doped amorphous Ge (a-Ge1−xMnx) thin films deposited on thermally oxidized Si substrates. Magnetic circular dichroism measurements reveal that their ferromagnetic ordering appears for x>0.02 and the films show magnetically homogeneous behavior. The resistivity of the films decreases with increasing x, and the temperature dependence of the resistivity shows semiconductor-like behavior. The anomalous Hall effect of the a-Ge1−xMnx films also exhibits ferromagnetic behavior. The temperature dependence of magnetization is consistent with that of the magnetooptical and magnetotransport results. These results indicate that the a-Ge1−xMnx films behave as a ferromagnetic semiconductor.