Behavior of implanted D and He in pyrolytic graphite
Behavior of implanted D and He in pyrolytic graphite
复制标题
热解石墨中注入 D 和 He 的行为
DOI：
10.1016/0022-3115(78)90163-0
复制
发表时间：
1978
影响因子：
3.1
通讯作者：
J. Roth
中科院分区：
文献类型：
--
作者：
R. A. Langley;R. Blewer;J. Roth
研究了室温下8 keV注入的氘和氦在棱柱面取向石墨中的行为与注入量和退火后温度的关系。利用质子后向散射法测量了植入种的深度分布。定量热解吸测量进行了研究的物种从样品在斜坡加热到950°C。结果总结如下。(1)在1018D/cm2.2的浓度下，D植入物捕获率达到100%。(2)测量的D植入物的平均范围和全宽度与先前的测量结果一致，但超过calculatedΔRpfor影响，达到1018D/cm2；在此影响力之上，剖面向表面变宽，而后边缘保持恒定的深度。(3)解吸研究表明，d2和cd4的发射峰均从~600℃开始，其中d2峰较宽（延伸至950℃），cd4峰较窄（延伸至750℃）。(4)大部分注入的D在退火过程中离开近表面区域，但仍有部分D在样品中保留到最高测试温度950℃，[D]/[C]≤0.025.5。(5)室温植入He的再发射率在1018-1019He /cm2的影响下约为95%。
The behavior of deuterium and helium implanted neat room temperature at 8 keV into prism plane oriented graphite was studied as a function of implantation fluence and post-anneal temperature. Depth profiles of the implanted species were measured by proton backscattering. Quantitative thermal desorption measurements were performed to study the species emitted from the sample during ramp heating to 950°C. A summary of the results is as follows.1.(1) 100% trapping was observed for D implants up to fluence of 1018D/cm2.2.(2) The measured mean ranges and full widths for D implants agreed with previous measurements but exceed the calculatedΔRpfor fluences up to 1018D/cm2; above this fluence the profiles broaden toward the surface with the rear edge remaining at a constant depth.3.(3) The desorption studies showed both D2and CD4emission starting ~600°C with the D2peak broad (extending to 950°C) and the CD4somewhat narrower (extending to 750°C).4.(4) Most of the implanted D leaves the near surface region on annealing, but some D remains in the sample up to the highest temperature tested, 950°C, [D]/[C] ⩽ 0.025.5.(5) Reemission of room temperature implanted He is approximately 95% for implant fluences of 1018–1019He/cm2.