High‐Temperature Active Oxidation of Chemically Vapor‐Deposited Silicon Carbide in an Ar─O2 Atmosphere
High‐Temperature Active Oxidation of Chemically Vapor‐Deposited Silicon Carbide in an Ar─O2 Atmosphere
复制标题
DOI：
10.1111/j.1151-2916.1993.tb03975.x
复制
发表时间：
1991-10
影响因子：
3.9
通讯作者：
T. Narushima;T. Goto;Y. Iguchi;T. Hirai
中科院分区：
文献类型：
--
作者：
T. Narushima;T. Goto;Y. Iguchi;T. Hirai
在1840 ~ 1923 K的温度范围内，研究了化学气相沉积碳化硅在0.1 MPa的氩气气氛中的活性氧化行为。在一定的氧分压（PO2t）下观察到从主动氧化（质量损失）到被动氧化（质量增加）的转变。PO2t值随着温度的升高和总气量的减小而增大。瓦格纳的模型和热力学计算很好地解释了这种行为。活性氧化速率（ka）随着O2分压和总气量的增加而增加。活性氧化的速率控制步骤是O2通过气体边界层的扩散。
Active oxidation behavior of chemically vapor-deposited silicon carbide in an Ar─O2 atmosphere at 0.1 MPa was examined in the temperature range between 1840 and 1923 K. The transition from active oxidation (mass loss) to passive oxidation (mass gain) was observed at certain distinct oxygen partial pressures (PO2t). The values of PO2t increased with increasing temperature and with decreasing total gas flow rates. This behavior was well explained by Wagner's model and thermodynamic calculations. Active oxidation rates (ka) increased with increasing O2 partial pressures and total gas flow rates. The rate-controlling step of the active oxidation was concluded to be O2 diffusion through the gaseous boundary layer.