Photoluminescence characterization of a high-efficiency Cu2ZnSnS4 device
Photoluminescence characterization of a high-efficiency Cu2ZnSnS4 device
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DOI：
10.1063/1.4825317
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发表时间：
2013-10-21
影响因子：
3.2
通讯作者：
Guha, Supratik
中科院分区：
文献类型：
--
作者：
Gershon, Talia;Shin, Byungha;Guha, Supratik
报道了一种效率为8.3%的Cu2ZnSnS4光伏器件的低温(4K)光致发光。测量结果被记录为激发强度的函数，并讨论了结果光谱的演变。光谱表明，这种辐射复合是一种具有高准施主-受主对密度的重补偿材料，这是由峰高、峰位置和激发强度之间的关系以及不同波长下的载流子寿命所决定的。利用缺陷衍生峰位置的蓝移来估计准施主-受主对的间距和密度。数据表明，平均对间距约为3.3 nm，产生的总辐射缺陷密度类似于1.3×10(19)cm(-3)。(C)2013 AIP出版有限责任公司。
We report on low-temperature (4 K) photoluminescence of an 8.3% efficient Cu2ZnSnS4 photovoltaic device. Measurements were recorded as a function of excitation intensity, and the evolution of the resulting spectra is discussed. The spectra indicate that the radiative recombination is characteristic of heavily compensated material with a high quasi donor-acceptor pair density, as determined by the relationship between peak height, peak position, and excitation intensity, as well as the carrier lifetimes at different wavelengths. The blue-shift of the defect-derived peak position is used to estimate the quasi donor-acceptor pair spacing and density. The data indicate an average pair spacing of roughly 3.3 nm, yielding an overall total radiative-defect density of similar to 1.3 x 10(19) cm(-3). (C) 2013 AIP Publishing LLC.