Research progress of Cu nanowires

Research progress of Cu nanowires
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铜纳米线的研究进展

DOI:
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发表时间:
2010
影响因子:
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通讯作者:
贺跃辉
贺跃辉
中科院分区:
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文献类型:
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作者:
王世良;涂敏;张泉;喻博闻;王超;刘新利;贺跃辉

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铜纳米线作为金属纳米线的典型代表,在微纳电子器件中发挥着重要作用,为量子化电导、尺寸效应等新物理现象的实验研究提供了理想的模型体系,本文系统地介绍了铜纳米线的模板辅助法、直接气相沉积法和外场诱导法等制备技术的研究进展,以及铜纳米线的电学性质、光学性质等,指出了铜纳米线在实际应用中可能面临的问题以及可能的解决方案。
Cu nanowires,as typical representative metal nanowires,have played a vital role in micro-/nano-scaled electronic devices,and provided ideal model systems to experimentally investigate the novel physical phenomena such as quantized conductance and size effects.In the present paper,we systematically described the research progress on the synthesis technologies for Cu nanowires including template-assisted methods,direct vapor-deposition methods,and external-field-induced methods,etc and the properties of Cu nanowires such as electronic properties,optical properties,were systematically described concerning with the research prograss,and pointed out the problems that Cu nanowires may be faced with during the practical applications,as well as the probable solution schema.