Excitonic ultraviolet lasing in ZnO-based light emitting devices
Excitonic ultraviolet lasing in ZnO-based light emitting devices
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DOI：
10.1063/1.2718516
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发表时间：
2007-03
影响因子：
4
通讯作者：
Y. Ryu;J. Lubguban;Tae-Seok Lee;H. White;T. Jeong;C. Youn;Bongjin Kim
中科院分区：
文献类型：
--
作者：
Y. Ryu;J. Lubguban;Tae-Seok Lee;H. White;T. Jeong;C. Youn;Bongjin Kim
作者制作了基于 ZnO∕BeZnO 薄膜的紫外 (UV) 激光二极管。该器件具有 p-n 异质结结构，多量子阱 (MQW) 有源层夹在引导限制层之间。 MQW有源层包括未掺杂的ZnO和BeZnO，而两个引导限制层分别是As掺杂的p型ZnO∕BeZnO和Ga掺杂的n型BeZnO∕ZnO薄膜。 MQW 区域的激子结合能非常大 (263meV)。通过光泵浦 MQW 观察到与激子相关的激光。 ZnO/BeZnO 基二极管在室温下通过电流注入表现出激光作用。激光产生机制是非弹性激子-激子碰撞。
The authors have fabricated ultraviolet (UV) laser diodes based on ZnO∕BeZnO films. The devices have p-n heterojunction structures with a multiple quantum well (MQW) active layer sandwiched between guide-confinement layers. The MQW active layer comprises undoped ZnO and BeZnO, while the two guide-confinement layers were As-doped p-type ZnO∕BeZnO and Ga-doped n-type BeZnO∕ZnO films, respectively. The exciton binding energy in the MQW region is exceptionally large (263meV). Exciton-related lasing was observed by optically pumping the MQWs. ZnO∕BeZnO-based diodes showed laser action by current injection at room temperature. The lasing mechanism is inelastic exciton-exciton collision.