Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer
Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer
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DOI：
10.1063/1.3517506
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发表时间：
2010-11
影响因子：
4
通讯作者：
H. Zan;Wei‐Tsung Chen;Hsiu-Wen Hsueh;Shih-Chin Kao;Ming-Che Ku;C. Tsai;H. Meng
中科院分区：
文献类型：
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作者：
H. Zan;Wei‐Tsung Chen;Hsiu-Wen Hsueh;Shih-Chin Kao;Ming-Che Ku;C. Tsai;H. Meng
这项工作演示了一个实时可见光光电晶体管组成的宽带隙非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT）和窄带隙聚合物盖层。覆盖层和IGZO层形成p-n结二极管。p-n结吸收可见光并因此将电子注入IGZO层中，这进而影响a-IGZO TFT的体电压以及阈值电压。讨论了IGZO背界面电荷引起的磁滞现象。
This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a-IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed.