Charge collection properties of heavily irradiated epitaxial silicon detectors
Charge collection properties of heavily irradiated epitaxial silicon detectors
复制标题
强辐照外延硅探测器的电荷收集特性
DOI：
10.1016/j.nima.2005.08.066
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发表时间：
2005
影响因子：
1.4
通讯作者：
M. Zavrtanik
中科院分区：
文献类型：
--
作者：
G. Kramberger;V. Cindro;I. Dolenc;E. Fretwurst;G. Lindström;I. Mandić;M. Mikuž;M. Zavrtanik
在外延硅上处理的探测器似乎是一个可行的解决方案，在升级的LHC（SLHC）跟踪探测器的最内层的极端辐射水平。用24 GeV/c的质子和反应堆中子对一组厚度为50和75μm（ρ=50Ωcm）的外延垫探测器进行了辐照，辐照当量注量达1016 cm-2。用电荷灵敏二极管和25 ns整形电路测量了~（90）Sr源最小电离电子的电荷收集。研究了退火时间和工作温度对收集电荷的影响。结果用于预测为SLHC提出的细间距像素检测器的性能。
Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75μm thicknesses (ρ=50Ωcm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 1016cm-2. Charge collection for minimum ionizing electrons from a90Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC.