Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy
Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy
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DOI：
10.1063/1.2067711
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发表时间：
2005-09-26
影响因子：
4
通讯作者：
Ichikawa, M
中科院分区：
文献类型：
--
作者：
Nakamura, Y;Watanabe, K;Ichikawa, M
扫描隧道谱研究揭示了Ge沉积在超薄氧化硅膜上形成的超高密度(~gt；10(12)cm(-2))Ge纳米晶中的量子限制效应。随着晶体尺寸的减小，导带最大值上移，价带最小值下移。两种情况下的能量移动都约为0.7 eV，尺寸从7 nm变化到2 nm。这表明，随着尺寸的减小，Ge纳米晶的禁带宽度增加到接近1.4 eV。这种尺寸依赖关系可以用Ge纳米晶体中的量子限制效应来解释。(C)2005年美国物理研究所。
Scanning tunneling spectroscopic studies revealed the quantum-confinement effects in Ge nanocrystals formed with ultrahigh density (>10(12) cm(-2)) by Ge deposition on ultrathin Si oxide films. With decreasing crystal size, the conduction band maximum upshifted and the valence band minimum downshifted. The energy shift in both cases was about 0.7 eV with the size change from 7 to 2 nm. This shows that the energy band gaps of Ge nanocrystals increased to similar to 1.4 eV with decreasing size. This size dependence can be explained by the quantum-confinement effect in Ge nanocrystals. (C) 2005 American Institute of Physics.