Application of a semiconductor tip to capacitance microscopy
Application of a semiconductor tip to capacitance microscopy
复制标题
半导体尖端在电容显微镜中的应用
DOI：
10.1063/1.121927
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发表时间：
1998
影响因子：
4
通讯作者：
K. Hane
中科院分区：
文献类型：
--
作者：
K. Goto;K. Hane
半导体尖端已应用于扫描电容显微镜（SCM）。局部静电场是通过尖端载流子的耗尽来测量的。采用具有尖端的硅微悬臂梁。该 SCM 技术已用于电介质/电极样品的电容观察。使用该技术的电位测定法在聚合物薄膜上的电荷注入记录实验中得到了证明。
A semiconductor tip has been applied to the scanning capacitance microscopy (SCM). Local electrostatic fields are measured through depletion of carriers at the tip end. A Si microcantilever with the sharp end is employed. This SCM technique has been used in a capacitance observation of a dielectric/electrode sample. Potentiometry using this technique is demonstrated in an experiment of charge injection recording on a polymer film.