Impurity effects on charge transport and magnetoconductance in a single layer poly(3-hexyl-thiophene) device

Impurity effects on charge transport and magnetoconductance in a single layer poly(3-hexyl-thiophene) device
复制标题

杂质对单层聚(3-己基噻吩)器件中电荷传输和磁导的影响

DOI:
10.1063/1.4950859
复制
发表时间:
2016-05
影响因子:
4
通讯作者:
Theo Kreouzis
Theo Kreouzis
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Hang Gu;Shankui Chang;Haizhou Lu;David F. Holford;Tingting Zhang;Jianxu Hu;William P. Gillin;Theo Kreouzis

文献摘要

参考文献

相似文献

我们已经使用了在聚(3-己基噻吩)中引入浅孔陷阱来测试双极化子理论的磁导(MC)的预测之一。结果表明,浅陷阱的引入有效地增加了输运态的能量无序程度,同时不影响费米能级的位置,这导致了MC响应的增加。这些结果被证明是在定性与理论一致,并提出了一种机制,通过陷阱状态可能会影响有机半导体的MC响应。这项工作提出了一种可控的化学掺杂的方式,工程师在给定的偏压下的绝对电流的变化取决于阳极的选择。它还允许在不同的驱动条件下调整负MC响应和电致发光效率的幅度。
We have used the introduction of shallow hole traps in poly(3-hexyl-thiophene) to test one of the predictions of the bipolaron theory of magnetoconductance (MC). The results show that the introduction of shallow traps effectively increases the degree of energetic disorder in the transport states whilst not affecting the position of the Fermi level and that this results in an increase in the MC response. These results are demonstrated to be in qualitative agreement with the theory and suggest one mechanism through which trap states may affect the MC response of organic semiconductors. This work presents a controllable way of chemical doping to engineer a change in absolute current at a given bias depending on the choice of anodes. It also allows for tuning the magnitude of negative MC response and electroluminescence efficiency under different driving conditions.
DOI: 10.1103/physrevb.90.155205
发表时间: 2014-10
期刊: Physical Review B
影响因子: 3.7
作者:
M. Cox;M. Wijnen;G. Wetzelaer;M. Kemerink;P. Blom;B. Koopmans
通讯作者: M. Cox;M. Wijnen;G. Wetzelaer;M. Kemerink;P. Blom;B. Koopmans
DOI: 10.1103/physrevlett.99.216801
发表时间: 2007-11-23
影响因子: 8.6
作者:
Bobbert, P. A.;Nguyen, T. D.;Wohlgenannt, M.
通讯作者: Wohlgenannt, M.
DOI: --
发表时间: 2011
期刊: --
影响因子: --
作者:
M. Rosseinsky
通讯作者: M. Rosseinsky
DOI: 10.1063/1.2812574
发表时间: 2007-11
影响因子: 3.2
作者:
H. Ahn;A. Ohno;J. Hanna
通讯作者: H. Ahn;A. Ohno;J. Hanna
DOI: 10.2352/j.imagingsci.technol.1999.43.3.art00007
发表时间: 1999-05
影响因子: 1
作者:
J. Scott;Sergio Ramos;G. Malliaras
通讯作者: J. Scott;Sergio Ramos;G. Malliaras