Impurity effects on charge transport and magnetoconductance in a single layer poly(3-hexyl-thiophene) device
Impurity effects on charge transport and magnetoconductance in a single layer poly(3-hexyl-thiophene) device
复制标题
杂质对单层聚(3-己基噻吩)器件中电荷传输和磁导的影响
DOI:
10.1063/1.4950859
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发表时间:
2016-05
影响因子:
4
通讯作者:
Theo Kreouzis
中科院分区:
文献类型:
--
作者:
Hang Gu;Shankui Chang;Haizhou Lu;David F. Holford;Tingting Zhang;Jianxu Hu;William P. Gillin;Theo Kreouzis
We have used the introduction of shallow hole traps in poly(3-hexyl-thiophene) to test one of the predictions of the bipolaron theory of magnetoconductance (MC). The results show that the introduction of shallow traps effectively increases the degree of energetic disorder in the transport states whilst not affecting the position of the Fermi level and that this results in an increase in the MC response. These results are demonstrated to be in qualitative agreement with the theory and suggest one mechanism through which trap states may affect the MC response of organic semiconductors. This work presents a controllable way of chemical doping to engineer a change in absolute current at a given bias depending on the choice of anodes. It also allows for tuning the magnitude of negative MC response and electroluminescence efficiency under different driving conditions.
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影响因子:
3.7
作者:
M. Cox;M. Wijnen;G. Wetzelaer;M. Kemerink;P. Blom;B. Koopmans
通讯作者:
M. Cox;M. Wijnen;G. Wetzelaer;M. Kemerink;P. Blom;B. Koopmans
影响因子:
8.6
作者:
Bobbert, P. A.;Nguyen, T. D.;Wohlgenannt, M.
通讯作者:
Wohlgenannt, M.
DOI:
--
发表时间:
2011
期刊:
--
影响因子:
--
作者:
M. Rosseinsky
通讯作者:
M. Rosseinsky
影响因子:
3.2
作者:
H. Ahn;A. Ohno;J. Hanna
通讯作者:
H. Ahn;A. Ohno;J. Hanna
DOI:
10.2352/j.imagingsci.technol.1999.43.3.art00007
发表时间:
1999-05
影响因子:
1
作者:
J. Scott;Sergio Ramos;G. Malliaras
通讯作者:
J. Scott;Sergio Ramos;G. Malliaras