Influence of hydrogen gas flow ratio on the properties of silicon- and nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
Influence of hydrogen gas flow ratio on the properties of silicon- and nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
复制标题
氢气流量比对等离子体增强化学气相沉积硅氮掺杂类金刚石碳薄膜性能的影响
DOI:
10.1016/j.diamond.2022.108878
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发表时间:
2022
影响因子:
4.1
通讯作者:
Nakazawa Hideki
中科院分区:
文献类型:
--
作者:
Sasaki Yuya;Osanai Hiroya;Ohtani Yusuke;Murono Yuta;Sato Masayoshi;Kobayashi Yasuyuki;Enta Yoshiharu;Suzuki Yushi;Nakazawa Hideki