Study on solid structure of pentacene thin films using Raman imaging
Study on solid structure of pentacene thin films using Raman imaging
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DOI：
10.1002/jrs.4090
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发表时间：
2012-12-01
影响因子：
2.5
通讯作者：
Furukawa, Yukio
中科院分区：
文献类型：
--
作者：
Seto, Keisuke;Furukawa, Yukio
我们提出了一个532 nm的激发拉曼成像研究并五苯薄膜（厚度，2，5，10，20，50，100，和150？nm）。并五苯薄膜的结构已经通过1596-cm-1谱带（b3 g）与1533-cm-1谱带（ag）的强度比（R）的图像和直方图进行了研究，这可以用作固态相：1.54-nm和1.44-nm相的标记。的拉曼图像显示，岛状的1.44 nm的相域生长在1.54 nm的相层从50？nm，并且1.54-nm相层的所有表面从100？nm.结构紊乱已讨论的基础上的R值的直方图中的带的半高全宽为每个电影。版权所有（c）2012约翰威利父子有限公司
We present a 532-nm excited Raman imaging study of pentacene thin films (thickness, 2, 5, 10, 20, 50, 100, and 150?nm) prepared on an SiO2 surface. The structure of the pentacene films has been investigated by images and histograms of the ratio (R) of intensity of the 1596-cm-1 band (b3g) to that of the 1533-cm-1 band (ag), which can be used as a marker of solid-state phases: 1.54-nm and 1.44-nm phases. The Raman images showed that island-like 1.44-nm phase domains are grown on the 1.54-nm phase layer from 50?nm, and all the surface of the 1.54-nm phase layer is covered with the 1.44-nm phase layer from 100?nm. The structural disorders have been discussed on the basis of the full width at half maximum of a band in the histogram of the R values for each film. Copyright (c) 2012 John Wiley & Sons, Ltd.