ZnTe-InAs Heterojunctions Prepared by Liquid-Phase Epitaxy
ZnTe-InAs Heterojunctions Prepared by Liquid-Phase Epitaxy
复制标题
液相外延法制备ZnTe-InAs异质结
DOI：
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发表时间：
1972
期刊：
影响因子：
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通讯作者：
Kiyoshi Takahashi
中科院分区：
文献类型：
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作者：
Teijiro Tamura;T. Moriizumi;Kiyoshi Takahashi
ZnTe-InAs异质结是通过液相外延生长技术制备的。 InAs 层是从 ZnTe 衬底上的 In 溶液中生长出来的。光学透过率研究表明，边界处存在InAs-ZnTe混晶层。 ZnTe-InAs 异质结二极管在正向偏压下表现出 SCLC 特性。表明在ZnTe衬底中，高电阻率层是通过In从InAs层扩散而形成的。正向 I-V 特性可以通过高电阻率层中的空穴空间电荷有限流来解释。利用兰伯特理论得出该层的陷阱密度约为1×1014cm-3，陷阱能级位于价带边缘上方约0.38 eV处。
ZnTe-InAs heterojunctions are prepared by the liquid-phase epitaxial growth technique. InAs layers are grown from the In solutions on ZnTe substrates. The study on the optical transmittance reveals that InAs-ZnTe mixed-crystal layer exists at the boundary. The ZnTe-InAs heterojunction diodes show SCLC characteristics at forward bias. It is suggested that in the ZnTe substrates, high-resistivity layers are formed by the diffusion of In from the InAs layers. The forward I–V characteristics can be explained by the hole space-charge limited flow in the high-resistivity layers. By using Lampert theory, it is concluded that this layer has a trap density of about 1×1014cm-3 and the trap level is located about 0.38 eV above the valence band edge.