Photoinduced stiffening and photoplastic effect of ZnS individual nanobelt in nanoindentation
Photoinduced stiffening and photoplastic effect of ZnS individual nanobelt in nanoindentation
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DOI：
10.1063/1.3500421
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发表时间：
2010-11
影响因子：
3.2
通讯作者：
Xuejun Zheng;G. Yu;Y. Q. Chen;S. Mao;Tie-qiang Zhang
中科院分区：
文献类型：
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作者：
Xuejun Zheng;G. Yu;Y. Q. Chen;S. Mao;Tie-qiang Zhang
通过使用纳米压痕仪与入射紫外（UV）光源系统相结合，观察了 ZnS 单个纳米带（NB）的光致硬化（PIS）和光塑性效应（PPE）。结果表明，紫外光照下ZnS个体NB的弹性模量和硬度比黑暗下至少大32%和20%。 PIS 和 PPE 的机制可以通过 ZnS 单个 NB 中自由载流子的光生作用导致电子应变和 Peierls 势垒的增加来解释。该研究可能为基于单个纳米结构的光电器件的应用提供有用的指导。
The photoinduced stiffening (PIS) and photoplastic effect (PPE) of ZnS individual nanobelt (NB) were observed by using a nanoindenter in conjunction with an incident ultraviolet (UV) light source system. The results show that the elastic modulus and hardness of ZnS individual NB under UV illumination are at least 32% and 20% larger than those in darkness. The mechanisms of PIS and PPE are interpreted by the increase in electronic strain and Peierls barrier due to the photogeneration of free carriers in ZnS individual NB. The research may offer useful guidelines to the application of optoelectronic devices based on individual nanostructures.