Defect identification in semiconductors with positron annihilation: Experiment and theory
Defect identification in semiconductors with positron annihilation: Experiment and theory
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DOI：
10.1103/revmodphys.85.1583
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发表时间：
2013-11-14
影响因子：
44.1
通讯作者：
Makkonen, Ilja
中科院分区：
文献类型：
--
作者：
Tuomisto, Filip;Makkonen, Ilja
正电子湮没谱特别适用于研究半导体中的空位型缺陷。结合最先进的实验和理论方法，可以详细识别缺陷及其化学环境。带隙中的电荷态和缺陷能级也是可访问的。在这篇综述中，主要的实验和理论分析技术进行了描述。这些方法的使用说明通过在技术上重要的元素和化合物半导体的例子。未来的挑战包括非晶材料和瞬态缺陷相关现象的分析。
Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.