High performance of pentacene organic thin film transistors by doping of iodine on source/drain regions
High performance of pentacene organic thin film transistors by doping of iodine on source/drain regions
复制标题
DOI：
10.1016/j.orgel.2013.02.001
复制
发表时间：
2013-04
影响因子：
3.2
通讯作者：
Rahim Abdur;K. Jeong;Mi Jung Lee;Jaegab Lee
中科院分区：
文献类型：
--
作者：
Rahim Abdur;K. Jeong;Mi Jung Lee;Jaegab Lee
在并五苯有机薄膜晶体管(OTFT)的顶接触点结构中引入碘进行接触掺杂，研究其对接触电阻和电学性能的影响。碘掺杂导致了并五苯结构的改变，从而导致了电学各向异性的增加，即横向和垂直电阻率之比的增加。Au接触下掺杂并五苯薄膜的两个电阻组分是接触电阻的主要贡献者，并提出了接触电阻与碘掺杂的关系模型。最后，由于低接触电阻，在掺碘源漏接触上制备的OTFT显示出高的迁移率，达到1.078cm2/vs，是未掺杂接触OTFT的两倍。
Contact doping was conducted by iodine in a top contact configuration in a pentacene organic thin film transistor (OTFT), to investigate its effects on contact resistance and the resulting electrical performance. Iodine doping in the pentacene film caused the change of pentacene structure, thus leading to an increase in electrical anisotropy, i.e. ratio of lateral to vertical resistivity. The two resistive components of doped pentacene film underneath the Au contacts were major contributors to the contact resistance, and a model to explain the dependence of contact resistance on iodine doping was presented. Finally, OTFTs fabricated on iodine doped source/drain contacts exhibited high mobility of 1.078cm2/Vs, two times that of OTFTs with undoped contacts, due to the low contact resistance.